US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 25 for "Memory devices having vertical transistors and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,725, issued on Aug. 25, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory devices having vertical transistors and methods for forming the same" was invented by Wei Liu (Wuhan, China), Hongbin Zhu (Wuhan, China), Yanhong Wang (Wuhan, China), Bingjie Yan (Wuhan, China), Wenyu Hua (Wuhan, China), Fandong Liu (Wuhan, China) and Ya Wang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and methods for forming the same are provided. The semiconductor device includes an array of vertical transistors. Each transistor includes a semiconductor body extending in a vertical direction, and a gate struc...