US Patent Issued to Yangtze Memory Technologies on Aug. 18 for "Semiconductor device and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,713,899, issued on Aug. 18, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Semiconductor device and fabrication method thereof" was invented by Renyan Wang (Wuhan, China), Wei Xu (Wuhan, China), Zhipeng Wu (Wuhan, China), Hang Yin (Wuhan, China) and Chao Sun (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor devices and fabrication methods thereof. An example semiconductor device includes conductive layers. The conductive layers include a first conductive layer and a second conductive layer. The semiconductor device further includes an insulating structure over the first co...