US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 18 for "Memory devices using defective address information processing circuits, and operating methods, and memory systems thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 18 -- United States Patent no. 12,712,049, issued on Aug. 18, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory devices using defective address information processing circuits, and operating methods, and memory systems thereof" was invented by Xiaodong Mei (Wuhan, China), Daesik Song (Wuhan, China), Zhefan Li (Wuhan, China), Huangpeng Zhang (Wuhan, China) and Jinze Song (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first defective address information memory configured to store multiple pieces of initial defective address information, the multiple pieces of initial defective address information include initial target de...