US Patent Issued to Yangtze Memory Technologies on Aug. 11 for "Three-dimensional memory devices and fabricating methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,145, issued on Aug. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three-dimensional memory devices and fabricating methods thereof" was invented by Xiaoxin Liu (Wuhan, China), ZongLiang Huo (Wuhan, China) and Lei Xue (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a memory device having a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first set of peripheral circuits having a first transistor configured to operate with a first voltage, and a second set of peripheral circuits having a second transistor configured ...