US Patent Issued to Yangtze Memory Technologies on Aug. 11 for "Staircase bridge structures for word line contacts in three-dimensional memory" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,131, issued on Aug. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Staircase bridge structures for word line contacts in three-dimensional memory" was invented by Qiang Tang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of three-dimensional (3D) memory devices and methods for forming the 3D memory devices are disclosed. In an example, the 3D memory device includes a film stack having a plurality of conductive and dielectric layer pairs vertically stacked on a substrate. Each conductive and dielectric layer pair includes a dielectric layer and a conductive layer. The 3D memory device also includes...