US Patent Issued to Yangtze Memory Technologies on Aug. 11 for "Programming methods for memory devices, memory devices and memory systems to decrease programming time of a programming operation" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,150, issued on Aug. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Programming methods for memory devices, memory devices and memory systems to decrease programming time of a programming operation" was invented by SongMin Jiang (Wuhan, China), Man Hu (Wuhan, China), Yuanyuan Min (Wuhan, China) and HongTao Liu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A programming method for a memory device, a memory device and a memory system including applying first and second pass voltages with different ramp timings. The programming method includes: applying a programming voltage on a selected word line; applying a f...