US Patent Issued to Yangtze Memory Technologies on Aug. 11 for "Memory devices, program methods, and memory systems" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,706,166, issued on Aug. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory devices, program methods, and memory systems" was invented by Lei Guan (Wuhan, China), HongTao Liu (Wuhan, China), Ying Huang (Wuhan, China), SongMin Jiang (Wuhan, China) and Yuanyuan Min (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a memory device, a program method, and a memory system. The memory device includes: a memory cell array and a peripheral circuit configured to: apply a verify voltage to a word line when incremental step pulse programming is performed on a plurality of memory cells, so as t...