US Patent Issued to Yangtze Memory Technologies on Aug. 11 for "Memory device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,627, issued on Aug. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory device and manufacturing method thereof" was invented by He Chen (Wuhan, China) and Ziqun Hua (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a memory device including providing a base wafer including a semiconductor material layer, and forming first and second spacers in the semiconductor material layer. The first spacers extend from a first surface of the semiconductor material layer to a second surface of the semiconductor material layer. The second spacers cross the first spacers and extend from the first surface ...