US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on April 7 for "Three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,748, issued on April 7, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices and methods for forming the same" was invented by Linchun Wu (Wuhan, China), Shuangshuang Wu (Wuhan, China), Lei Li (Wuhan, China), Kun Zhang (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) memory device includes a stack structure including interleaved first conductive layers and first dielectric layers, and a channel structure extending through the stack structure along a first direction in contact with a first semiconductor ...