US Patent Issued to Yangtze Memory Technologies on April 7 for "Memory device, and memory system and operation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,480, issued on April 7, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory device, and memory system and operation method thereof" was invented by Feiyang Zhang (Wuhan, China) and Hongwen Liu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present disclosure provide a memory device, a memory system and an operation method of the memory system, and a storage medium. The memory device includes: multiple word lines, where a plurality of strings coupled to each of the word lines are divided into a first string area and a second string area; and at least one redundant stripe corresponding to each of ...