US Patent Issued to Yangtze Memory Technologies on April 7 for "Architecture and method for NAND memory operation" (Chinese Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,597,470, issued on April 7, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Architecture and method for NAND memory operation" was invented by Changhyun Lee (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method for programming a memory cell string, a programming voltage is applied on a selected word line to program a selected memory cell of the memory cell string. A first pass voltage is applied on a first word line coupled to a first memory cell of the memory cells. A second pass voltage is applied on a second word line coupled to a second memory cell of the memory cells. Further, a third pass voltage is applied...