US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on April 7 for "3D NAND memory device with isolation trenches and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,965, issued on April 7, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"3D NAND memory device with isolation trenches and fabrication method thereof" was invented by Huidan Hou (Wuhan, China), Lan Yao (Wuhan, China) and Yanwei Shi (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure discloses a semiconductor device and a fabrication method thereof. In the method, firstly etching a substrate in a first device region to form at least one first trench and then etching the substrate in both first device region and second device region to form at least one first isolation trench at the positions corres...