US Patent Issued to Yangtze Memory Technologies on April 21 for "Three-dimensional memory device and fabrication method" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,548, issued on April 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three-dimensional memory device and fabrication method" was invented by Jiandong Wang (Wuhan, China), Wenbin Sun (Wuhan, China), Siliu Zhang (Wuhan, China), Xiaofen Zheng (Wuhan, China), Yuping Xia (Wuhan, China) and Yonggang Yang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D memory device includes a conductor/insulator stack containing a conductive layer and a dielectric layer alternatingly stacked, a channel hole structure in the conductor/insulator stack, and a gate line slit (GLS) structure. The GLS structure includes a main sectio...