US Patent Issued to Yangtze Memory Technologies on April 21 for "Memory device and operation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,163, issued on April 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory device and operation method thereof" was invented by Li Xiang (Wuhan, China), Ke Liang (Wuhan, China) and Jinchi Han (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Example memory devices, memory systems, and methods for reducing program disturb in NAND flash memory are disclosed. One example method includes applying, at a first time, a first voltage to a first select line coupled to a first select gate transistor, where the memory device includes a memory cell array. The memory cell array includes a memory string. The memory string in...