US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on April 21 for "Memory device, memory system, and method for data calculation with the memory device" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,158, issued on April 21, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device, memory system, and method for data calculation with the memory device" was invented by Yue Sheng (Wuhan, China), Shu Xie (Wuhan, China) and Weijun Wan (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, a memory system, and a method for data calculation with the memory device are provided. The memory device includes an array of memory cells and a peripheral circuit coupled to the memory cells is provided. The peripheral circuit includes a static random-access memory (SRAM) configured to obtain first data transmitte...