US Patent Issued to Yangtze Memory Technologies on April 21 for "Memory, operation method of memory and memory system including read calibration circuit" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,166, issued on April 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory, operation method of memory and memory system including read calibration circuit" was invented by Chong Jin (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory includes a page buffer that includes a sensing latch circuit, a first charge circuit and a read calibration circuit. The first charge circuit and the sensing latch circuit are coupled to a sensing node, and the read calibration circuit is coupled to the sensing latch circuit at a first end and to the sensing node at a second end, and is configured to calibrate a potential o...