US Patent Issued to Yangtze Memory Technologies on April 21 for "Managing program disturb in memory devices" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,609,164, issued on April 21, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Managing program disturb in memory devices" was invented by Kaikai You (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Example memory devices, memory systems, and methods for reducing program disturb in NAND flash memory are disclosed. One example method includes applying, at a first time and during a channel preparation period of a program operation of a first memory cell in a memory cell array, a first voltage to a first word line coupled to the first memory cell. A second voltage is applied to the first word line at a second time after the...