US Patent Issued to YANGTZE DELTA GRADUATE SCHOOL OF BEIJING INSTITUTE OF TECHNOLOGY (JIAXING), BEIJING INSTITUTE OF TECHNOLOGY on Nov. 3 for "Fixed layer of magnetic tunnel junction, magnetic memory chip, and method for manufacturing magnetic tunnel junction" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,656, issued on Nov. 3, was assigned to YANGTZE DELTA GRADUATE SCHOOL OF BEIJING INSTITUTE OF TECHNOLOGY (JIAXING) (Jiaxing, China) and BEIJING INSTITUTE OF TECHNOLOGY (Beijing).

"Fixed layer of magnetic tunnel junction, magnetic memory chip, and method for manufacturing magnetic tunnel junction" was invented by Shujun Ye (Beijing) and Koichi Nishioka (Jiaxing, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a fixed layer of a magnetic tunnel junction, a magnetic storage chip, and a method for manufacturing the magnetic tunnel junction, and particularly provides a new MTJ device structure and a method for manufac...