US Patent Issued to Yale University on March 24 for "Porous III-nitrides and methods of using and making thereof" (Connecticut Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,433, issued on March 24, was assigned to Yale University (New Haven, Conn.).

"Porous III-nitrides and methods of using and making thereof" was invented by Jung Han (New Haven, Conn.), Kanglin Xiong (New Haven, Conn.), Ge Yuan (New Haven, Conn.) and Cheng Zhang (New Haven, Conn.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Porous III-nitrides having controlled/tuned optical, electrical, and thermal properties are described herein. Also disclosed are methods for preparing and using such porous III-nitrides."

The patent was filed on Oct. 30, 2020, under Application No. 17/773,332.

*For further information, including images, charts and tables, plea...