US Patent Issued to Xidian University on April 14 for "Nanochannel gallium nitride-based device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,502, issued on April 14, was assigned to Xidian University (Xi'an, China).

"Nanochannel gallium nitride-based device and manufacturing method thereof" was invented by Jiejie Zhu (Xi'an, China), Xiaohua Ma (Xi'an, China), Yue Hao (Xi'an, China) and Jingshu Guo (Xi'an, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nanochannel GaN-based device includes: a substrate layer, a nucleation layer, a buffer layer, a channel region, an insertion layer, a barrier layer, a cap layer, a first highly n+-doped material layer, a second n+-doped material layer, a source electrode, a drain electrode, and a gate electrode. A first arrayed pattern edge is form...