US Patent Issued to XIAMEN TIANMA DISPLAY TECHNOLOGY on March 17 for "Oxide semiconductor thin-film transistor device and method of manufacturing the same" (Japanese Inventor)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,737, issued on March 17, was assigned to XIAMEN TIANMA DISPLAY TECHNOLOGY Co. LTD. (Xiamen, China).

"Oxide semiconductor thin-film transistor device and method of manufacturing the same" was invented by Kazushige Takechi (Kawasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An oxide semiconductor TFT device includes a substrate and a first oxide semiconductor TFT on the substrate. The first oxide semiconductor TFT includes a first oxide semiconductor layer, a first top-gate electrode, and a first source/drain electrode. The first oxide semiconductor layer includes a first channel region overlapping the first top-gate electrode, and two fi...