US Patent Issued to XIAMEN SANAN INTEGRATED CIRCUIT, SANAN JAPAN TECHNOLOGY, FUJIAN JING'AN OPTOELECTRONICS on Sept. 15 for "Surface acoustic wave device" (Japanese, Chinese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,920, issued on Sept. 15, was assigned to XIAMEN SANAN INTEGRATED CIRCUIT Co. LTD. (Xiamen, China), SANAN JAPAN TECHNOLOGY Corp. (Tokyo) and FUJIAN JING'AN OPTOELECTRONICS Co. LTD. (Quanzhou, China).

"Surface acoustic wave device" was invented by Yoshiaki Takaoka (Tokyo) and Ming-Hui Fang (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A surface acoustic wave device includes a substrate that has a top surface and that contains a plurality of protrusions protruding from the top surface and spaced apart from each other, an intermediate layer disposed on the substrate so as to fill a recess formed among the protrusions, a piezoelectric la...