US Patent Issued to XIAMEN SAN'AN OPTOELECTRONICS on Sept. 8 for "Light-emitting diode and method for manufacturing thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,301, issued on Sept. 8, was assigned to XIAMEN SAN'AN OPTOELECTRONICS Co. LTD. (Xiamen, China).

"Light-emitting diode and method for manufacturing thereof" was invented by Anhe He (Fujian, China), Su-hui Lin (Fujian, China), Feng Wang (Fujian, China), Qing Wang (Fujian, China), Yu-Chieh Huang (Fujian, China) and Kang-wei Peng (Fujian, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting diode includes a light-transmissive substrate, a light-emitting unit disposed on the light-transmissive substrate, an insulating layer, a first electrode and a second electrode. The insulating layer includes a first insulating portion and a second in...