US Patent Issued to XIAMEN SAN'AN OPTOELECTRONICS on March 24 for "Micro light emitting diode, micro light emitting device, and display" (Chinese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,320, issued on March 24, was assigned to XIAMEN SAN'AN OPTOELECTRONICS Co. LTD. (Xiamen, China).

"Micro light emitting diode, micro light emitting device, and display" was invented by Yenchin Wang (Xiamen, China), Jinghua Chen (Xiamen, China), Huanshao Kuo (Tianjin, China), Shao-Hua Huang (Xiamen, China) and Shuiqing Li (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A micro light emitting diode includes a semiconductor unit having a first surface and a second surface, and including a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first surface has a roughened portion that is located within...