US Patent Issued to Xiamen San'an Optoelectronics on July 21 for "Light-emitting diode" (Chinese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,313, issued on July 21, was assigned to Xiamen San'an Optoelectronics Co. Ltd. (Xiamen, China).

"Light-emitting diode" was invented by Xiushan Zhu (Xiamen, China) and Yan Li (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting diode includes a light-emitting structure, a first insulating layer and a first electrode layer. The first electrode layer is formed on the first insulating layer and in the first opening, and is electrically connected to the first semiconductor layer through the first opening. The first electrode layer includes a first metal reflective layer and a stress adjustment layer. The first metal reflective l...