US Patent Issued to XIAMEN SAN'AN OPTOELECTRONICS on July 14 for "Light-emitting diode and light-emitting device including the same" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,909, issued on July 14, was assigned to XIAMEN SAN'AN OPTOELECTRONICS Co. LTD. (Hongtang Town, China).

"Light-emitting diode and light-emitting device including the same" was invented by Xiushan Zhu (Xiamen, China) and Yan Li (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting diode includes an epitaxial structure, at least one via hole, a first insulation layer, a first connecting electrode, a second connecting electrode, a second insulation layer, a first pad, and a second pad. The first insulation layer includes a first insulation portion and a second insulation portion such that an upper surface of the first connecting...