ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,460, issued on Feb. 17, was assigned to XIAMEN SAN'AN OPTOELECTRONICS Co. LTD (Fujian, China).
"Light-emitting diode and light-emitting module having the same" was invented by Xiushan Zhu (Xiamen, China) and Yan Li (Xiamen, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A light emitting device includes a semiconductor structure and an insulating layer. The semiconductor structure has a mesa recess extending from a top surface of a second semiconductor layer to a top surface of a first semiconductor layer. The insulating layer covers the semiconductor structure and has an electrode passage hole on the top surface of the first semiconductor at t...