ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,765, issued on Aug. 11, was assigned to XIAMEN SAN'AN OPTOELECTRONICS Co. LTD. (Hongtang Town, China).
"Light emitting diode device" was invented by Shiwei Liu (Xiamen, China), Dazhong Chen (Xiamen, China), Jin Xu (Xiamen, China), Baojun Shi (Nanan City, China), Shuijie Wang (Xiamen, China), Ke Liu (Xiamen, China), Qiang Wang (Xiamen, China), Yu-Tsai Teng (Xiamen, China), Wen-Chia Huang (Xiamen, China) and Chung-Ying Chang (Xiamen, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A light emitting diode device includes a substrate having a substrate surface, an epitaxial structure having an epitaxial surface opposite to the substrate surface, and...