US Patent Issued to XIAMEN SAN'AN INTEGRATED CIRCUIT on Nov. 3 for "Group III-V compound semiconductor device and passivation structure adapted therein" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,396, issued on Nov. 3, was assigned to XIAMEN SAN'AN INTEGRATED CIRCUIT Co. LTD. (Fujian, China).

"Group III-V compound semiconductor device and passivation structure adapted therein" was invented by Dexiao Guo (Xiamen, China), Zhidong Lin (Xiamen, China), Junlei He (Xiamen, China), Lige Wang (Xiamen, China), Xiaoyuan Wang (Xiamen, China), Jie Zhao (Xiamen, China), Cheng Liu (Xiamen, China) and Nien-tze Yeh (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A Group III-V compound semiconductor device includes a Group III-V compound substrate and a passivation structure. The passivation structure is disposed on a surface of the Group III-V ...