US Patent Issued to XIAMEN SAN'AN INTEGRATED CIRCUIT on June 16 for "Silicon carbide metal oxide semiconductor field effect transistor device" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,301, issued on June 16, was assigned to XIAMEN SAN'AN INTEGRATED CIRCUIT Co. LTD. (Xiamen Fujian, China).

"Silicon carbide metal oxide semiconductor field effect transistor device" was invented by Lijun Li (Fujian, China), Zhidong Lin (Fujian, China), Zhigao Peng (Fujian, China), Yonghong Tao (Fujian, China), Yuanxu Guo (Fujian, China) and Min Wang (Fujian, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide metal oxide semiconductor field effect transistor device includes a substrate, an epitaxial layer, and a plurality of cell units each of which includes a first cell and a second cell that are disposed in the epitaxy layer and ...