US Patent Issued to XIAMEN INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE on Oct. 6 for "Method and apparatus for initializing resistive random access memory and electronic device" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,786, issued on Oct. 6, was assigned to XIAMEN INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE Co. LTD. (Xiamen, China).

"Method and apparatus for initializing resistive random access memory and electronic device" was invented by Anqiao Chen (Xiamen, China), Tingying Shen (Xiamen, China), Taiwei Chiu (Xiamen, China), Szu-Chun Kang (Xiamen, China), Wuxin Li (Xiamen, China), Jinmao Yan (Xiamen, China) and Enping Cheng (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and apparatus for initializing an RRAM and an electronic device are provided. The method includes: inputting a plurality of pulses of a first voltage into an RRAM until memory...