US Patent Issued to XIAMEN EXTREMELY PQ DISPLAY TECHNOLOGY on Nov. 3 for "Micro light emitting diode chip and display device" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,877, issued on Nov. 3, was assigned to XIAMEN EXTREMELY PQ DISPLAY TECHNOLOGY Co. LTD. (Xiamen, China).

"Micro light emitting diode chip and display device" was invented by Chen-Ke Hsu (Xiamen, China), Xiangwei Xie (Xiamen, China) and Tung-Kai Liu (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A micro-LED chip includes an epitaxial structure, which includes first and second doped type semiconductor layers and an active layer disposed between the first and second doped type semiconductor layers; a light-emitting side of the first doped type semiconductor layer facing away from the active layer is provided with a patterned structure; and...