US Patent Issued to XI'AN ESWIN MATERIAL TECHNOLOGY on Nov. 3 for "Method for producing nitrogen-doped single crystal silicon ingot and nitrogen-doped single crystal silicon ingot" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,781,383, issued on Nov. 3, was assigned to XI'AN ESWIN MATERIAL TECHNOLOGY Co. LTD. (Xi'an, China).

"Method for producing nitrogen-doped single crystal silicon ingot and nitrogen-doped single crystal silicon ingot" was invented by Xun Lan (Xi'an, China) and Yang Li (Xi'an, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for producing a nitrogen-doped single crystal silicon ingot includes, after cutting a reference ingot into sample silicon wafers, selecting a plurality of silicon wafers to be tested and evaluating a distribution of defect areas in the plurality of silicon wafers, wherein the defect areas comprise any of a pure vacancy area,...