US Patent Issued to X-FAB Global Services on April 14 for "Reduced flicker noise transistor layout" (Malaysian, British Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,547, issued on April 14, was assigned to X-FAB Global Services GmbH (Erfurt, Germany).

"Reduced flicker noise transistor layout" was invented by Xuezhou Cao (Plymouth, Great Britain), Shyh Yau Tein (Kota Samarahan, Malaysia) and Michaelina Ong (Kuching, Malaysia).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one aspect, a transistor includes a diffusion region having a drain, a source, and a channel between said drain and source. The transistor further includes an isolation region around said diffusion region for electrically isolating said transistor. In addition, the transistor includes a gate poly overlapping at least a part of said channel, ...