ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,455, issued on Sept. 22, was assigned to X-FAB FRANCE SAS (Corbeil-Essonnes, France).
"Semiconductor fabrication process" was invented by Nicolas Pons (Corbeil-Essonnes, France), Rui Zhu (Corbeil-Essonnes, France), Aude Berbezier (Corbeil-Essonnes, France), Raphael Lachaume (Corbeil-Essonnes, France), Brice Grandchamp (Corbeil-Essonnes, France) and Gregory U'Ren (Corbeil-Essonnes, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of making a semiconductor structure, the method including providing a silicon on insulator (SOI) substrate having a first epitaxial layer and a bulk silicon substrate separated by a buried oxide layer. The met...