ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,670, issued on Oct. 20, was assigned to WUXI SMART MEMORIES TECHNOLOGIES Co. LTD. (Wuxi, China).
"Operation method of ferroelectric memory" was invented by Feng Pan (Wuxi, China), Ke Ma (Wuxi, China) and Tong Feng (Wuxi, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one aspect, a method of operating a set of ferroelectric memory cells is provided. The method may include writing a first data bit having a first value to a first ferroelectric memory cell. The method may include writing a sign bit having the first value to second ferroelectric memory cell. The method may include receiving a read or a write-operation request. The meth...