US Patent Issued to WUXI SMART MEMORIES TECHNOLOGIES on Oct. 20 for "Ferroelectric memory device and method for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,455, issued on Oct. 20, was assigned to WUXI SMART MEMORIES TECHNOLOGIES Co. LTD. (Wuxi, China).

"Ferroelectric memory device and method for forming the same" was invented by Jianhua Sun (Wuxi, China), Yushi Hu (Wuxi, China), Meilan Guo (Wuxi, China), Zhenyu Lu (Wuxi, China) and Wei Zhang (Wuxi, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a plurality of memory cells. Each memory cell includes at least one transistor and at least one capacitor electrically coupled to the at least one transistor. Each capacitor includes a first electrode, a second electrode surrounding at least a first portion of the first electrode, ...