ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,851, issued on June 9, was assigned to WUHAN XINXIN SEMICONDUCTOR MANUFACTURINGCo. LTD. (Wuhan, China).

"Semiconductor device and manufacturing process for the same" was invented by Guangjie Xue (Wuhan, China), Le Li (Wuhan, China) and Jun Zhou (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a manufacturing method therefor. The method includes: providing a semiconductor structure, the semiconductor structure including a semiconductor substrate, a gate disposed on the semiconductor substrate, and an interlayer dielectric layer covering the semiconductor substrate and the gate; whe...