US Patent Issued to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Semiconductor device and method of fabricating the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,798, issued on Aug. 4, was assigned to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING Co. LTD. (Wuhan, China).

"Semiconductor device and method of fabricating the same" was invented by Liliang Gu (Wuhan, China), Fan Yang (Wuhan, China) and Sheng Hu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of fabricating the same are disclosed. A reference direction for a substrate is parallel to a first or second crystallographic direction, and a patterned hard mask layer is distributed along the first crystallographic direction. For substrates with notches oriented in different crystallographic directions, the patter...