US Patent Issued to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Method of manufacturing a three-dimensionally integrated structure having a clamping surface and a wafer stack with a chamfered surface" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,771, issued on Aug. 4, was assigned to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING Co. LTD. (Wuhan, China).

"Method of manufacturing a three-dimensionally integrated structure having a clamping surface and a wafer stack with a chamfered surface" was invented by Anna Zhang (Wuhan, China), Yu Zhou (Wuhan, China) and Sheng Hu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D integrated structure and a method for fabricating the structure. In the method, a first trimming process is performed in a peripheral region of a wafer stack to form a chamfered surface adjacent to and surrounding an active device region. As a result, a thickness of the...