US Patent Issued to Wolfspeed on Sept. 8 for "Gate trench power semiconductor devices having deep support shields and methods of fabricating such device" (North Carolina Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,217, issued on Sept. 8, was assigned to Wolfspeed Inc. (Durham, N.C.).

"Gate trench power semiconductor devices having deep support shields and methods of fabricating such device" was invented by Woongsun Kim (Cary, N.C.), Naeem Islam (Morrisville, N.C.), Madankumar Sampath (Morrisville, N.C.) and Sei-Hyung Ryu (Cary, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprises a silicon carbide based semiconductor layer structure that includes a drift layer having a first conductivity type, a gate trench that extends to a first depth into an upper surface of the semiconductor layer structure, a gate electrode in the gate tre...