US Patent Issued to WOLFSPEED on Nov. 3 for "Semiconductor power devices having multiple gate trenches and methods of forming such devices" (North Carolina Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,410, issued on Nov. 3, was assigned to WOLFSPEED INC. (Durham, N.C.).

"Semiconductor power devices having multiple gate trenches and methods of forming such devices" was invented by Woongsun Kim (Cary, N.C.), Daniel Jenner Lichtenwalner (Raleigh, N.C.), Sei-Hyung Ryu (Cary, N.C.) and Naeem Islam (Morrisville, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor layer structure and a gate formed in a gate trench in the semiconductor layer structure. The gate trench has a bottom surface comprising a first portion at a first level and a second portion at a second level, different from the first level. A met...