US Patent Issued to Wolfspeed on May 26 for "Gate trench power semiconductor devices having improved breakdown performance and methods of forming such devices" (North Carolina Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,853, issued on May 26, was assigned to Wolfspeed Inc. (Durham, N.C.).

"Gate trench power semiconductor devices having improved breakdown performance and methods of forming such devices" was invented by Madankumar Sampath (Morrisville, N.C.), Woongsun Kim (Cary, N.C.), Naeem Islam (Morrisville, N.C.) and Sei-Hyung Ryu (Cary, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor layer structure comprising a gate trench formed in an upper surface thereof, a gate finger in the gate trench, a supplemental dielectric layer on an upper surface of the gate finger and vertically overlaps the gate trench, and a gat...