ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,302, issued on June 30, was assigned to Wolfspeed Inc. (Durham, N.C.).

"Barrier structure for dispersion reduction in transistor devices" was invented by Jia Guo (New Hill, N.C.), Kyle Bothe (Cary, N.C.), Olof Tornblad (San Jose, Calif.) and Scott Sheppard (Chapel Hill, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Transistor devices are provided. In one example, the transistor device includes a channel layer. The transistor device includes a multilayer barrier structure on the channel layer. The multilayer barrier structure includes a first Group III-nitride layer and a second Group III-nitride layer on the first Group III-nitride layer and o...