US Patent Issued to Wolfspeed on June 2 for "Gate trench power semiconductor devices having trench shielding patterns formed during the well implant and related methods" (North Carolina Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,187, issued on June 2, was assigned to Wolfspeed Inc. (Durham, N.C.).

"Gate trench power semiconductor devices having trench shielding patterns formed during the well implant and related methods" was invented by Madankumar Sampath (Morrisville, N.C.), Sei-Hyung Ryu (Cary, N.C.), Naeem Islam (Morrisville, N.C.) and Woongsun Kim (Cary, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A wide band-gap semiconductor layer structure is provided that comprises a drift region having a first conductivity type and a plurality of source regions having the first conductivity type on the drift region. A plurality of trenches are provided in an upper surface of...