US Patent Issued to WOLFSPEED on Feb. 24 for "Field reducing structures for nitrogen-polar group III-nitride semiconductor devices" (North Carolina Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,760, issued on Feb. 24, was assigned to WOLFSPEED INC. (Durham, N.C.).

"Field reducing structures for nitrogen-polar group III-nitride semiconductor devices" was invented by Kyle Bothe (Cary, N.C.), Chris Hardiman (Cary, N.C.) and Scott Sheppard (Chapel Hill, N.C.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Field reducing structures for transistor devices having Group III-nitride semiconductor structures are provided. In one example, a transistor device includes a nitrogen-polar (N-polar) Group III-nitride semiconductor structure. The transistor device includes a source contact, a drain contact, and a gate contact. The transistor device includes ...