US Patent Issued to Wisconsin Alumni Research Foundation on Oct. 27 for "Metal-organic chemical vapor deposition of semi-insulating iron-doped group III-nitride films" (Wisconsin Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,774,520, issued on Oct. 27, was assigned to Wisconsin Alumni Research Foundation (Madison, Wis.).

"Metal-organic chemical vapor deposition of semi-insulating iron-doped group III-nitride films" was invented by Chirag Gupta (Middleton, Wis.), Swarnav Mukhopadhyay (Madison, Wis.) and Shubhra Shweta Pasayat (Middleton, Wis.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for growing semi-insulating, Fe-doped group III-nitrides on a substrate via MOCVD are provided. In the methods, the introduction of Fe dopants into the growing group III-nitride film is delayed until after the group III-nitride film has begun coalescence. The Fe dopants are then int...