US Patent Issued to Winsheng Material Technology on April 7 for "Quality control method for growing silicon carbide crystal" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,595,586, issued on April 7, was assigned to Winsheng Material Technology Co. Ltd. (New Taipei City, Taiwan).

"Quality control method for growing silicon carbide crystal" was invented by Yun-Fu Chen (New Taipei City, Taiwan), Wei-Tse Hsu (New Taipei City, Taiwan), Min-Sheng Chu (New Taipei City, Taiwan), Chien-Li Yang (New Taipei City, Taiwan), Tsu-Hsiang Lin (New Taipei City, Taiwan) and Yuan-Hong Huang (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a silicon carbide crystal growth device and a quality control method. The device includes: an annealing unit, a crystal growth unit, an atmosphere control unit, and a tr...