ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,772,441, issued on Oct. 20, was assigned to Winbond Electronics Corp. (Taichung City, Taiwan).
"Memory device and method of fabricating the same" was invented by Shuo-Ting Yu (Tainan City, Taiwan), Hsuan-Tung Chu (Tainan City, Taiwan) and Wei-Che Chang (Taichung City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a substrate, word line structures, bit line structures, dummy bit line structures, partition walls, and conductive plugs. The bit line structures are disposed above the substrate and extend from the array region to a transition region in the substrate. The dummy bit line structures are disposed in the transition...