US Patent Issued to Winbond Electronics on March 24 for "Memory device with increased density and method of fabricating the same" (American, Taiwanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,201, issued on March 24, was assigned to Winbond Electronics Corp. (Taichung City, Taiwan).

"Memory device with increased density and method of fabricating the same" was invented by Frederick Chen (San Jose, Calif.) and Wei-Che Chang (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a flash memory device including a gate stack structure, at least three channel pillars, a charge storage structure, at least three source line, and at least three bit lines. The gate stack structure is disposed above a substrate. The gate stack structure includes a plurality of gate layers and a plurality of insulating layers stacked alte...